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This Concept Map, created with IHMC CmapTools, has information related to: P-N Junction, N-type semiconductors have Charge Carriers, Types of Semiconductors made of Group IV, Band gap between Valence&Conduction Bands, Charge Carriers such as Holes, Recombinations decide Lifetime, P-N Junction are formed with P-type semiconductors, P-N Junction form Diodes, Band gap which influences Absorption Coefficient, Depletion region is influenced by Forward bias, P-N Junction efficency depends on Types of Semiconductors, Intrinsic Carrier Concentration is increased by Doping, P-N Junction efficency depends on Doping, P-N Junction suffer from Recombinations, P-N Junction efficency depends on Intrinsic Carrier Concentration, Diodes have equation, P-N Junction are formed with N-type semiconductors, P-N Junction efficency depends on Recombinations, Diffusion formes Depletion region, Charge Carriers such as Electrons, Types of Semiconductors made of Group III-V