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This Concept Map, created with IHMC CmapTools, has information related to: Final Map, Gallium Arsenide are used for Thin Film Solar Cells, Cadmium Telluride are used for Multi-Junction, PV Cell Efficiency measurements depend on Illumination Sources, Recombination Lifetime given by Radiative Recombination, Czochralski Silicon which is sliced into Silicon Wafers, P-N Junction efficency depends on Doping, Monocrystalline are used for Crystalline Solar Cells, Texturing used in High Efficiency Solar Cells, Efficiency by using Anti-Reflection Coatings, Cadmium Telluride are used for Thin Film Solar Cells, Band gap between Valence&Conduction Bands, Optical properties to increase Efficiency, Recombination Lifetime given by Surface Recombination, Direct Bandgap such as Gallium Arsenide, Front Surface made of Low Iron Glass, Temperature depends on Conduction, Modules affected by Temperature, P-N Junction suffer from Recombinations, Types of Semiconductors made of Group III-V, Direct Bandgap such as Cadmium Telluride